MT29F4G08BABWP-ET Micron Technology Inc, MT29F4G08BABWP-ET Datasheet - Page 52
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MT29F4G08BABWP-ET
Manufacturer Part Number
MT29F4G08BABWP-ET
Description
IC FLASH 4GBIT 48TSOP
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F4G08BABWP-ET.pdf
(57 pages)
Specifications of MT29F4G08BABWP-ET
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
4G (512M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Figure 49:
Figure 50:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
WE#
R/B#
I/Ox
CE#
ALE
CLE
RE#
WE#
R/B#
I/Ox
CLE
CE#
ALE
RE#
INPUT Command
SERIAL DATA
00h
t
t
80h
WC
WC
Add 1
Col
PROGRAM PAGE Operation with RANDOM DATA INPUT
INTERNAL DATA MOVE
Add 1
Col
Add 2
Col
Add 2
Col
Add 1
Row
Add 1
Row
Add 2
Row
Add 2
Row
Add 3
Row
Add 3
Row
t
ADL
35h
D
t
N
WB
IN
Serial Input
Busy
t
R
DATA MOVE
INTERNAL
N+1
D
85h
IN
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
INPUT Command
RANDOM DATA
85h
Add 1
Col
52
Add 2
Col
Add 1
Column Address
Col
Add 1
Row
Add 2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Col
Add 2
Row
t
ADL
Add 3
Row
D
N
IN
t ADL
Serial Input
Data
1
N+1
D
IN
PROGRAM
Command
Data
N
10h
t
WB
©2004 Micron Technology, Inc. All rights reserved.
10h
t WB
Timing Diagrams
t
PROG
t PROG
Busy
READ STATUS
READ STATUS
Command
Command
Don‘t Care
70h
70h
Don‘t Care
Status
Status