M25PE20-VMN6TP NUMONYX, M25PE20-VMN6TP Datasheet - Page 17

IC FLASH 2MBIT 75MHZ 8SOIC

M25PE20-VMN6TP

Manufacturer Part Number
M25PE20-VMN6TP
Description
IC FLASH 2MBIT 75MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M25PE20-VMN6TP

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
2M (256K x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Cell Type
NOR
Density
2Mb
Access Time (max)
8ns
Interface Type
Serial (SPI)
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
SOIC N
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
256K
Supply Current
8mA
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25PE20-VMN6TPTR

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M25PE20, M25PE10
5
Memory organization
The M25PE20 memory is organized as:
The M25PE10 memory is organized as:
In the M25PE20 and M25PE10, each page can be individually:
The device is page or sector erasable (bits are erased from 0 to 1).
Table 5.
1024 pages (256 bytes each).
262,144 bytes (8 bits each)
64 subsectors (32 Kbits, 4,096 bytes each)
4 sectors (512 Kbits, 65,536 bytes each)
512 pages (256 bytes each).
131,074 bytes (8 bits each)
32 subsectors (32 Kbits, 4,096 bytes each)
2 sectors (512 Kbits, 65,536 bytes each)
programmed (bits are programmed from 1 to 0)
erased (bits are erased from 0 to 1)
written (bits are changed to either 0 or 1).
Sector
3
2
1
0
M25PE20 memory organization
Subsector
63
48
47
32
31
16
15
4
3
2
1
0
3F000h
2F000h
1F000h
0F000h
30000h
20000h
10000h
04000h
03000h
02000h
01000h
00000h
Address range
Memory organization
3FFFFh
30FFFh
2FFFFh
20FFFh
1FFFFh
10FFFh
0FFFFh
04FFFh
03FFFh
02FFFh
01FFFh
00FFFh
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