KST10MTF_Q Fairchild Semiconductor
KST10MTF_Q
Manufacturer Part Number
KST10MTF_Q
Description
Transistors Bipolar - BJT NPN Si Transistor Epitaxial
Manufacturer
Fairchild Semiconductor
Specifications of KST10MTF_Q
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
30 V
Collector- Emitter Voltage Vceo Max
25 V
Emitter- Base Voltage Vebo
3 V
Collector-emitter Saturation Voltage
25 V
Gain Bandwidth Product Ft
650 MHz
Dc Collector/base Gain Hfe Min
60 at 4 mA at 10 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Maximum Power Dissipation
350 mW
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