IS43R32800B-5BL ISSI, Integrated Silicon Solution Inc, IS43R32800B-5BL Datasheet - Page 33

• Manufacturer Part Number: IS43R32800B-5BL
• Description: IC DDR SDRAM 256MBIT 144BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: DDR SDRAMr

Specifications of IS43R32800B-5BL

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.4 V ~ 2.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 144-BGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 700ps
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: Mini BGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 400mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS43R32800B
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00D
03/19/08
W rite interr uptedby Write
Wri te interr upted by Read
access is allowed. I nternal W RI TE to RE AD command interval(tWT R) is minimum 1 CL K. The
inputdata on DQ at the interrupting REA D cycle is "don't care". tWTR is referenced from the first
positive edgeafter the last data input.
Burst write operation can be interrupted by write of any bank. R andom column access is allowed.
WRIT E to WRI TE interval is minimum 1 CL K.
Burst write operation can be interrupted by read of the same or the other bank. Ra ndom column
Command
Command
A0-7 ,9-11
A0-7 ,9-11
BA 0,1
BA 0,1
/CLK
DQS
CL K
/CLK
CL K
A8
DQ
DM
A8
DQ
QS
WR IT E
WR IT E
Yi
00
Yi
00
0
0
WR IT E
Dai0
Yj
00
Dai0
0
Dai1
Dai1
Daj0
Wr ite Interrupted by Read (BL=8, CL=2 .5)
Wr ite Interrupted by Wr ite (BL =8)
tWTR
Daj1
WR IT E
RE AD
Daj2
Yk
10
Yj
00
0
0
Daj3
Dak0
Dak1
Dak2
Dak3
WR IT E
Qaj0
Dak4
Yl
00
0
Qaj1 Qaj2 Qaj3
Dak5
Dal0
Dal1
Qaj4 Qaj5 Qaj6
Dal2 Dal3
Dal4
Dal5 Dal6
Qaj7
Dal7
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