IS43R32800B-5BL ISSI, Integrated Silicon Solution Inc, IS43R32800B-5BL Datasheet - Page 29

• Manufacturer Part Number: IS43R32800B-5BL
• Description: IC DDR SDRAM 256MBIT 144BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: DDR SDRAMr

Specifications of IS43R32800B-5BL

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.4 V ~ 2.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 144-BGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 700ps
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: Mini BGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 400mA
• Pin Count: 144
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS43R32800B
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00D
03/19/08
BURST INTERRUPTION
Read I nterru pted by Read
RE AD to RE AD interval is minimum 1CL K.
R ead I nterru pted by prechar ge
minimum 1 CL K. A P RE command to output disable latency is equivalent to the /CA S L atency.
As a result, RE AD to PR E i nterval determines valid data length to be output. T he figure below
shows examples of B L=8.
Burst read operation can be interrupted by new read of any bank. R andom column access is allowed.
Burst read operation can be interrupted by precharge of the same bank. R EA D to PRE interval is
CL=2 .0
Command
A0-7 ,9-11
BA 0,1
/CLK
DQS
CL K
A8
DQ
Command
Command
Command
RE AD RE AD
/CLK
DQS
DQS
DQS
CL K
00
Yi
DQ
DQ
DQ
0
00
Yj
0
Read Int err upted by Prechar ge (B L=8)
RE AD
Read Int err upted by Read (B L=8, CL=2 )
RE AD
RE AD
Qai0 Qai1 Qaj0 Qaj1 Qaj2 Qaj3 Qak0 Qak1 Qak2 Qak3 Qak4 Qak5 Qal0 Qal1 Qal2
RE AD
10
PR E
Yk
0
PR E
Q0
Q0
Q0
0
Q1
Q1
Q1
PR E
Q2
Q2
RE AD
Q3
Q3
01
Yl
Q4
Q5
Qal3 Qal4 Qal5 Qal6 Qal7
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