BC 850B B6327 Infineon Technologies, BC 850B B6327 Datasheet - Page 8

• Manufacturer Part Number: BC 850B B6327
• Description: Transistors Bipolar - BJT LOW NOISE TRANSISTOR 45V 330mW
• Manufacturer: Infineon Technologies

Specifications of BC 850B B6327

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 200 mA
• Gain Bandwidth Product Ft: 250 MHz
• Dc Collector/base Gain Hfe Min: 110
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 100 mA
• Dc Current Gain Hfe Max: 200 at 2 mA at 5 V
• Maximum Power Dissipation: 330 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000

Transition frequency f
V
f
Total power dissipation P
BC846-BC850
T
CE
MHz
mW
10
10
10
5
5
360
300
270
240
210
180
150
120
= 5 V
3
2
1
90
60
30
10
0
0
-1
15
30
5
45
10
0
60
T
75
=
5
90 105 120
tot
(I
10
= (T
C
1
)
S
EHP00363
mA
)
C
T
°C
S
10
150
2
8
Collector-base capacitance C
Emitter-base capacitance C
Total power dissipation P
BC847BF-BC850BF
mW
pF
300
250
225
200
175
150
125
100
13
11
10
75
50
25
9
8
7
6
5
4
3
2
1
0
0
0
0
15
4
30
45
8
CEB
60
BC846...-BC850...
75
12
90 105 120 °C
tot
eb
= (T
16
cb
2007-04-20
= (V
= (V
S
V
)
V
T
EB
CB
S
CCB
CB
)
/V
150
22
EB
)