BC 850B B6327 Infineon Technologies, BC 850B B6327 Datasheet - Page 11

• Manufacturer Part Number: BC 850B B6327
• Description: Transistors Bipolar - BJT LOW NOISE TRANSISTOR 45V 330mW
• Manufacturer: Infineon Technologies

Specifications of BC 850B B6327

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 200 mA
• Gain Bandwidth Product Ft: 250 MHz
• Dc Collector/base Gain Hfe Min: 110
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 100 mA
• Dc Current Gain Hfe Max: 200 at 2 mA at 5 V
• Maximum Power Dissipation: 330 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000

F
Permissible Puls Load R
BC847BT
Noise figure F =
I
C
= 0.2mA, R
K/W
10
dB
20
15
10
10
10
10
10
5
0
10
-1
3
2
1
0
10
BC 846...850
-1
-6
10
5
S
-5
= 2k
10
10
(V
0
-4
CE
, f = 1kHz
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10
)
-3
thJS
10
10
=
1
-2
(t
EHP00370
p
V
s
V
)
t
CE
p
10
10
2
0
11
Permissible Pulse Load
P
BC847BT
Noise figure F =
I
F
C
totmax
= 0.2 mA, V
dB
15
10
10
10
10
10
20
0
5
10
3
2
1
0
10
BC 846...850
/P
-2
-6
totDC
10
10
-5
CE
=
-1
= 5V, R
10
(t
(f)
p
-4
)
BC846...-BC850...
10
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
0
S
-3
= 2 k
10
10
-2
2007-04-20
1
EHP00371
f
kHz
s
t
p
10
10
2
0