BC 850B B6327 Infineon Technologies, BC 850B B6327 Datasheet - Page 17

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BC 850B B6327

Manufacturer Part Number
BC 850B B6327
Description
Transistors Bipolar - BJT LOW NOISE TRANSISTOR 45V 330mW
Manufacturer
Infineon Technologies
Datasheet

Specifications of BC 850B B6327

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
200 mA
Gain Bandwidth Product Ft
250 MHz
Dc Collector/base Gain Hfe Min
110
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Continuous Collector Current
100 mA
Dc Current Gain Hfe Max
200 at 2 mA at 5 V
Maximum Power Dissipation
330 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
Package TSFP-3
1.2
0.2
1.35
1
4
Pin 1
±0.05
±0.05
0.4
3
0.4
±0.05
0.3
2
0.2
0.4
±0.05
±0.05
0.4
17
0.4
0.7
0.55
Manufacturer
BCR847BF
Type code
0.2
0.15
±0.04
±0.05
BC846...-BC850...
2007-04-20

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