BC 850B B6327 Infineon Technologies, BC 850B B6327 Datasheet - Page 7

• Manufacturer Part Number: BC 850B B6327
• Description: Transistors Bipolar - BJT LOW NOISE TRANSISTOR 45V 330mW
• Manufacturer: Infineon Technologies

Specifications of BC 850B B6327

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 200 mA
• Gain Bandwidth Product Ft: 250 MHz
• Dc Collector/base Gain Hfe Min: 110
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 100 mA
• Dc Current Gain Hfe Max: 200 at 2 mA at 5 V
• Maximum Power Dissipation: 330 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000

h
DC current gain h
V
Base-emitter saturation voltage
I
C
C
FE
CE
10
=
mA
10
10
10
10
10
10
10
5
5
-1
5
5
5
= 5 V
2
1
0
3
2
1
0
10
(V
0
100
-2
-50
BEsat
25
C
C
C
0.2
5
), h
10
FE
-1
100 C
25
0.4
-50 C
FE
= 20
C
C
5
=
10
0.6
0
(I
C
)
0.8
5
10
1
EHP00365
V
EHP00364
mA
V
C
BEsat
10
1.2
2
7
Collector-emitter saturation voltage
I
Collector cutoff current I
V
C
CB0
C
CB
10
= (V
mA
10
10
10
nA
10
10
10
10
10
5
5
-1
= 30 V
5
5
5
1
0
2
1
4
3
2
0
0
0
CEsat
0.1
), h
FE
50
-50
100
25
= 20
0.2
BC846...-BC850...
C
C
C
CBO
0.3
100
=
2007-04-20
max
0.4
(T
typ
˚C
EHP00415
EHP00367
T
V
A
A
CEsat
)
V
150
0.5