BC 850B B6327 Infineon Technologies, BC 850B B6327 Datasheet - Page 3

• Manufacturer Part Number: BC 850B B6327
• Description: Transistors Bipolar - BJT LOW NOISE TRANSISTOR 45V 330mW
• Manufacturer: Infineon Technologies

Specifications of BC 850B B6327

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 200 mA
• Gain Bandwidth Product Ft: 250 MHz
• Dc Collector/base Gain Hfe Min: 110
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 100 mA
• Dc Current Gain Hfe Max: 200 at 2 mA at 5 V
• Maximum Power Dissipation: 330 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000

Maximum Ratings
Parameter
Collector-emitter voltage
BC846...
BC847..., BC850...
BC848..., BC849...
Collector-emitter voltage
BC846...
BC847..., BC850...
BC848..., BC849...
Collector-base voltage
BC846...
BC847..., BC850...
BC848..., BC849...
Emitter-base voltage
BC846...
BC847..., BC850...
BC848..., BC849...
Collector current
Peak collector current
Total power dissipation-
T
T
T
T
T
Junction temperature
Storage temperature
S
S
S
S
S
71 °C, BC846-BC850
128 °C, BC847F-BC850F
135 °C, BC847L3-BC848L3
109 °C, BC847T
124 °C, BC846W-BC850W
3
Symbol
V
V
V
V
I
I
P
T
T
C
CM
j
stg
CEO
CES
CBO
EBO
tot
-65 ... 150
Value
BC846...-BC850...
330
250
250
250
250
100
200
150
65
45
30
80
50
30
80
50
30
6
6
6
2007-04-20
Unit
V
mA
mW
°C