BC 850B B6327 Infineon Technologies, BC 850B B6327 Datasheet - Page 4

• Manufacturer Part Number: BC 850B B6327
• Description: Transistors Bipolar - BJT LOW NOISE TRANSISTOR 45V 330mW
• Manufacturer: Infineon Technologies

Specifications of BC 850B B6327

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 200 mA
• Gain Bandwidth Product Ft: 250 MHz
• Dc Collector/base Gain Hfe Min: 110
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 100 mA
• Dc Current Gain Hfe Max: 200 at 2 mA at 5 V
• Maximum Power Dissipation: 330 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000

1
Thermal Resistance
Parameter
Junction - soldering point
BC846-BC850
BC847F-BC850F
BC847L3-BC848L3
BC847T
BC846W-BC850W
For calculation of R
thJA
please refer to Application Note Thermal Resistance
1)
4
Symbol
R
thJS
BC846...-BC850...
Value
240
165
105
90
60
2007-04-20
Unit
K/W