MZ0912B50Y TRAY NXP Semiconductors, MZ0912B50Y TRAY Datasheet - Page 8

• Manufacturer Part Number: MZ0912B50Y TRAY
• Description: Transistors Bipolar - BJT BULKTR TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of MZ0912B50Y TRAY

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 65 V
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 3 A
• Gain Bandwidth Product Ft: 1.215 GHz
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-423A
• Maximum Power Dissipation: 150000 mW
• Factory Pack Quantity: 4
• Part # Aliases: MZ0912B50Y,114

Philips Semiconductors
PACKAGE OUTLINE
1997 Feb 18
handbook, full pagewidth
NPN microwave power transistor
Dimensions in mm.
Torque on screw: Max. 0.5 Nm.
Recommended screw: M3.
3.5
2.9
3.4
3.2
0.1
X
seating plane
Y
3
1
2
24 max
Fig.8 SOT443A.
16.5
3.1
8
0.5 Y
4 min
0.5 Y
1.7 max
10.5
max
0.5 X
max
6.4
0.5 X
10.5
max
MBC663
max
23
MZ0912B50Y
Product specification