MZ0912B50Y TRAY NXP Semiconductors, MZ0912B50Y TRAY Datasheet

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MZ0912B50Y TRAY

Manufacturer Part Number
MZ0912B50Y TRAY
Description
Transistors Bipolar - BJT BULKTR TNS-MICP
Manufacturer
NXP Semiconductors
Datasheet
1.MZ0912B50Y_TRAY.pdf (12 pages)

Specifications of MZ0912B50Y TRAY

Product Category
Transistors Bipolar - BJT
Rohs
yes
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
65 V
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
3 V
Maximum Dc Collector Current
3 A
Gain Bandwidth Product Ft
1.215 GHz
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-423A
Maximum Power Dissipation
150000 mW
Factory Pack Quantity
4
Part # Aliases
MZ0912B50Y,114
Product specification
Supersedes data of November 1994
DATA SHEET
MZ0912B50Y
NPN microwave power transistor
DISCRETE SEMICONDUCTORS
1997 Feb 18

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MZ0912B50Y TRAY Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET MZ0912B50Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 18 ...

Page 2

Philips Semiconductors NPN microwave power transistor FEATURES Interdigitated structure provides high emitter efficiency Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Gold metallization realizes very stable characteristics and excellent lifetime Multicell geometry gives good balance ...

Page 3

Philips Semiconductors NPN microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V collector-emitter voltage CES V emitter-base voltage EBO I collector current (DC) ...

Page 4

Philips Semiconductors NPN microwave power transistor THERMAL CHARACTERISTICS T = 125 C unless otherwise specified. j SYMBOL R thermal resistance from junction to mounting base th j-mb R thermal resistance from mounting base to heatsink th mb-h Z thermal impedance ...

Page 5

Philips Semiconductors NPN microwave power transistor handbook, full pagewidth 0.635 handbook, full pagewidth Substrate: Epsilam 10. Thickness: 0.635 mm. Permittivity: = 10. r 1997 Feb 2 ...

Page 6

Philips Semiconductors NPN microwave power transistor 70 handbook, halfpage 0. Fig.4 Load power as a function of frequency; (In broadband test circuit ...

Page 7

Philips Semiconductors NPN microwave power transistor handbook, full pagewidth 0 Fig.7 Input impedance as a function of frequency, associated with optimum load impedance. ...

Page 8

Philips Semiconductors NPN microwave power transistor PACKAGE OUTLINE handbook, full pagewidth 0.1 3.5 2.9 X 3.4 3.2 Dimensions in mm. Torque on screw: Max. 0.5 Nm. Recommended screw: M3. 1997 Feb 18 24 max 0 seating plane Y ...

Page 9

Philips Semiconductors NPN microwave power transistor DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This ...

Page 10

Philips Semiconductors NPN microwave power transistor 1997 Feb 18 NOTES 10 Product specification MZ0912B50Y ...

Page 11

Philips Semiconductors NPN microwave power transistor 1997 Feb 18 NOTES 11 Product specification MZ0912B50Y ...

Page 12

Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + ...

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