MZ0912B50Y TRAY NXP Semiconductors, MZ0912B50Y TRAY Datasheet - Page 10
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MZ0912B50Y TRAY
Manufacturer Part Number
MZ0912B50Y TRAY
Description
Transistors Bipolar - BJT BULKTR TNS-MICP
Manufacturer
NXP Semiconductors
Datasheet
1.MZ0912B50Y_TRAY.pdf
(12 pages)
Specifications of MZ0912B50Y TRAY
Product Category
Transistors Bipolar - BJT
Rohs
yes
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
65 V
Collector- Emitter Voltage Vceo Max
20 V
Emitter- Base Voltage Vebo
3 V
Maximum Dc Collector Current
3 A
Gain Bandwidth Product Ft
1.215 GHz
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-423A
Maximum Power Dissipation
150000 mW
Factory Pack Quantity
4
Part # Aliases
MZ0912B50Y,114
Philips Semiconductors
Product specification
NPN microwave power transistor
MZ0912B50Y
NOTES
1997 Feb 18
10