MZ0912B50Y TRAY NXP Semiconductors, MZ0912B50Y TRAY Datasheet - Page 2

• Manufacturer Part Number: MZ0912B50Y TRAY
• Description: Transistors Bipolar - BJT BULKTR TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of MZ0912B50Y TRAY

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 65 V
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 3 A
• Gain Bandwidth Product Ft: 1.215 GHz
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-423A
• Maximum Power Dissipation: 150000 mW
• Factory Pack Quantity: 4
• Part # Aliases: MZ0912B50Y,114

Philips Semiconductors
FEATURES
APPLICATIONS
Common base, class C, broadband,
pulse power amplifier from
960 to 1215 MHz for TACAN
application.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT443A metal ceramic flange
package with base connected to
flange. It is mounted in common base
configuration, and specified in
class C.
1997 Feb 18
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
Interdigitated structure provides
high emitter efficiency
Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
Gold metallization realizes very
stable characteristics and excellent
lifetime
Multicell geometry gives good
balance of dissipated power and
low thermal resistance
Input and output matching cell
allows an easier design of circuits.
NPN microwave power transistor
QUICK REFERENCE DATA
Microwave performance up to T
broadband amplifier.
PINNING - SOT443A
Class C;
t
p
= 10 s; = 1%
OPERATION
MODE OF
PIN
1
2
3
handbook, halfpage
WARNING
collector
emitter
base connected to flange
Top view
2
Fig.1 Simplified outline and symbol.
0.960 to 1.215 50
(GHz)
1
2
f
mb
= 25 C in a common base class C
V
(V)
DESCRIPTION
CC
3
>50
(W)
P
MAM314
L
>7
(dB)
b
G
MZ0912B50Y
p
Product specification
>42
(%)
c
e
C
see Figs 6
and 7
Z
i
/Z
L
( )