MZ0912B50Y TRAY NXP Semiconductors, MZ0912B50Y TRAY Datasheet - Page 5

• Manufacturer Part Number: MZ0912B50Y TRAY
• Description: Transistors Bipolar - BJT BULKTR TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of MZ0912B50Y TRAY

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 65 V
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 3 V
• Maximum Dc Collector Current: 3 A
• Gain Bandwidth Product Ft: 1.215 GHz
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-423A
• Maximum Power Dissipation: 150000 mW
• Factory Pack Quantity: 4
• Part # Aliases: MZ0912B50Y,114

Philips Semiconductors
1997 Feb 18
handbook, full pagewidth
handbook, full pagewidth
NPN microwave power transistor
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity:
r
= 10.
mm
40
0.635
9
2
6.5
4.5
30 mm
L1
L2
2.5
Fig.3 Broadband test circuit.
3
12
C3
9
5
5
5
10
C5
3
30 mm
C2
20
0.635
9
11
L3
2
C4
V CC
3
MCD634
1
MGL064
2
C1
MZ0912B50Y
mm
40
Product specification