IS43R16160B-5TL-TR ISSI, Integrated Silicon Solution Inc, IS43R16160B-5TL-TR Datasheet - Page 37

• Manufacturer Part Number: IS43R16160B-5TL-TR
• Description: IC DDR SDRAM 256MBIT 66TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS43R16160B-5TL-TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOPII
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS43R83200B
IS43R16160B, IC43R16160B
Integrated Silicon Solution, Inc.
Rev. B
10/31/08
[DM CONTROL]
[Power DOWN]
DM is defined as the data mask for writes. During writes,DM masks input data word by word. DM
to write mask latency is 0.
The purpose of CLK suspend is power down. CKE is synchronous input except during the self-
refresh mode. A command at cycle is ignored. From CKE=H to normal function, DLL recovery time
is NOT required in the condition of the stable CLK operation during the power down mode.
Command
Command
Command
/CLK
DQS
CLK
DM
DQ
/CLK
CKE
CKE
CLK
WRITE
PRE
ACT
masked by DM=H
D0 D1
NOP
NOP
D3 D4
Power Down by CKE
DM Function(BL=8,CL=2)
Standby Power Down
D5 D6
Active Power Down
D7
READ
NOP
NOP
Don't Care
Valid
Valid
Q0
Q1
tXPNR/tXPRD
Q2
Q3
Q4
Q5
Q6
37