IS43R16160B-5TL-TR ISSI, Integrated Silicon Solution Inc, IS43R16160B-5TL-TR Datasheet - Page 17

• Manufacturer Part Number: IS43R16160B-5TL-TR
• Description: IC DDR SDRAM 256MBIT 66TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS43R16160B-5TL-TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOPII
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS43R83200B
IS43R16160B, IC43R16160B
Integrated Silicon Solution, Inc.
Rev. B
DDR SDRAM (Rev.1.1)
10/31/08
Command
Initial Address
A2
0
0
0
0
1
1
1
1
-
-
-
-
-
-
Address
DQS
/CLK
CLK
DQ
A1 A0
0
0
1
1
0
0
1
1
0
0
1
1
-
-
CL= 2
BL= 4
0
1
0
1
0
1
0
1
0
1
0
1
0
1
BL
8
4
2
Read
/CAS
Latency
Preliminary
Preliminary
Y
0
1
2
3
4
5
6
7
0
1
2
3
0
1
1
2
3
4
5
6
7
0
1
2
3
0
1
0
2
3
4
5
6
7
0
1
2
3
0
1
Q0 Q1 Q2 Q3
Burst
Length
Sequential
3
4
5
6
7
0
1
2
3
0
1
2
4
5
6
7
0
1
2
3
5
6
7
0
1
2
3
4
256M Double Data Rate Synchronous DRAM
Column Addressing
6
7
0
1
2
3
4
5
7
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
0
1
2
3
0
1
Zentel Electronics Corporation
1
0
3
2
5
4
7
6
1
0
3
2
1
0
Write
Y
2
3
0
1
6
7
4
5
2
3
0
1
A3S56D30/40ETP
Interleaved
Burst
Length
D0 D1 D2 D3
3
2
1
0
7
6
5
4
3
2
1
0
4
5
6
7
0
1
2
3
5
4
7
6
1
0
3
2
6
7
4
5
2
3
0
1
7
6
5
4
3
2
1
0
17