IS43R16160B-5TL-TR ISSI, Integrated Silicon Solution Inc, IS43R16160B-5TL-TR Datasheet - Page 12

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IS43R16160B-5TL-TR

Manufacturer Part Number
IS43R16160B-5TL-TR
Description
IC DDR SDRAM 256MBIT 66TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr

Specifications of IS43R16160B-5TL-TR

Format - Memory
RAM
Memory Type
DDR SDRAM
Memory Size
256M (16Mx16)
Speed
200MHz
Interface
Parallel
Voltage - Supply
2.5 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
66-TSOPII
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
700ps
Maximum Clock Rate
200MHz
Operating Supply Voltage (typ)
2.5V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IS43R83200B
IS43R16160B, IC43R16160B
12
I
FUNCTION TRUTH TABLE (continued)
I
DDR SDRAM (Rev.1.1)
REFRESHING
Current State
ABBREVIATIONS:
H=High Level, L=Low Level, X=Don't Care
BA=Bank Address, RA=Row Address, CA=Column Address, NOP=No Operation
NOTES:
1. All entries assume that CKE was High during the preceding clock cycle and the current clock cycle.
2. ILLEGAL to bank in specified state; function may be legal in the bank indicated by BA, depending on the state of
3. Must satisfy bus contention, bus turn around, write recovery requirements.
4. NOP to bank precharging or in idle state. May precharge bank indicated by BA.
5. ILLEGAL if any bank is not idle.
ILLEGAL = Device operation and/or data-integrity are not guaranteed.
REGISTER
SETTING
MODE
that bank.
/CS /RAS /CAS /WE Address
H
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
H
H
H
X
H
H
H
L
L
L
L
L
L
L
L
Preliminary
Preliminary
X
H
H
H
H
X
H
H
H
H
L
L
L
L
L
L
X X
H X
X BA, CA, A10
H BA, RA
H X
X X
H X
X BA, CA, A10
H BA, RA
H X
L
L
L
L
L
L
BA
BA, A10
Op-Code, Mode-
Add
BA
BA, A10
Op-Code, Mode-
Add
Command
DESEL
NOP
TERM
READ / WRITE
ACT
PRE / PREA
REFA
MRS
DESEL
NOP
TERM
READ / WRITE
ACT
PRE / PREA
REFA
MRS
256M Double Data Rate Synchronous DRAM
Action
NOP (Idle after tRC)
NOP (Idle after tRC)
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
NOP (Row Active after tRSC)
NOP (Row Active after tRSC)
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
ILLEGAL
Zentel Electronics Corporation
A3S56D30/40ETP
Integrated Silicon Solution, Inc.
Notes
10/31/08
Rev. B

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