MMBFJ202_Q Fairchild Semiconductor, MMBFJ202_Q Datasheet - Page 2

• Manufacturer Part Number: MMBFJ202_Q
• Description: JFET N-Channel Transistor General Purpose
• Manufacturer: Fairchild Semiconductor

Specifications of MMBFJ202_Q

• Transistor Polarity: N-Channel
• Gate-source Breakdown Voltage: - 40 V
• Continuous Drain Current: 4.5 mA
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Power Dissipation: 350 mW

J201 - J202 / MMBFJ201 - MMBFJ203 Rev. 1.0.0
© 2007 Fairchild Semiconductor Corporation
Electrical Characteristics *
* Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%
Off Characteristics
V
I
V
On Characteristics
I
Small Signal Characteristics
y
GSS
DSS
Symbol
FS
(BR)GSS
GS
(off)
Gate-Source Breakdwon Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Zero-Gate Voltage Drain Current *
Forward Transfer Admittance
Parameter
T
C
= 25°C unless otherwise noted
I
V
V
V
V
2
G
GS
DS
DS
DS
= -1mA, V
= 20V, I
= 20V, I
= 20V, f = 1.0kHz
= -20V, V
Conditions
DS
D
GS
DS
= 10nA
= 0
= 0
= 0
201
202
203
201
202
203
201
202
203
Min.
1000
1500
-0.3
-0.8
500
-40
0.2
0.9
-2
4
Max
-100
-1.5
-10
1.0
4.5
20
-4
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Units
mmhos
mA
pA
V
V