SI1029X-T1 Vishay/Siliconix, SI1029X-T1 Datasheet - Page 9

• Manufacturer Part Number: SI1029X-T1
• Description: MOSFET 60V 0.5A
• Manufacturer: Vishay/Siliconix

Specifications of SI1029X-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.305 A, - 190 A
• Resistance Drain-source Rds (on): 3 Ohms, 8 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-89-6
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 250 mW
• Factory Pack Quantity: 3000
• Tradename: TrenchFET

Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead
0.051
(1.300)
0.012
0.020
(0.300)
(0.500)
0.051
(0.201)
Recommended Minimum Pads
Dimensions in Inches/(mm)
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Document Number: 72605
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Revision: 21-Jan-08
21