SI1029X Vishay Siliconix, SI1029X Datasheet

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... 25_C 280 85_C 145 stg ESD Si1029X Vishay Siliconix D Replace Digital Transistor, Level-Shifter D Battery Operated Systems D Power Supply Converter Circuits Marking Code: H P-Channel Steady State 5 secs Steady State –60 "20 305 –200 –190 220 –145 – ...

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... Si1029X Vishay Siliconix _ Parameter Symbol Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance ...

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... Total Gate Charge (nC) g Document Number: 71435 S-03518—Rev. A, 11-Apr-01 New Product _ 1200 800 1000 0.5 0.6 Si1029X Vishay Siliconix Transfer Characteristics T = –55_C J 900 600 300 – Gate-to-Source Voltage (V) GS Capacitance 50 ...

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... Si1029X Vishay Siliconix Source-Drain Diode Forward Voltage 1000 100 T = 125_C 0.00 0.3 0.6 0.9 V – Source-to-Drain Voltage (V) SD www.vishay.com 4 New Product _ = 25_C J = –55_C 1.2 1.5 Threshold Voltage Variance Over Temperature 0.4 0.2 = 250 –0.0 –0.2 –0.4 –0.6 –0.8 –50 – ...

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... Total Gate Charge (nC) g Document Number: 71435 S-03518—Rev. A, 11-Apr-01 New Product 800 1000 1.5 1.8 Si1029X Vishay Siliconix Transfer Characteristics 1200 T = –55_C J 900 125_C 600 300 – Gate-to-Source Voltage (V) GS Capacitance ...

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... Si1029X Vishay Siliconix Source-Drain Diode Forward Voltage 1000 100 T = 125_C 0.00 0.3 0.6 0.9 V – Source-to-Drain Voltage (V) SD Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – www.vishay.com 6 New Product _ = 25_C J = –55_C 1.2 1.5 Threshold Voltage Variance Over Temperature ...