SI1029X-T1 Vishay/Siliconix, SI1029X-T1 Datasheet

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SI1029X-T1

Manufacturer Part Number
SI1029X-T1
Description
MOSFET 60V 0.5A
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI1029X-T1

Product Category
MOSFET
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
+/- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.305 A, - 190 A
Resistance Drain-source Rds (on)
3 Ohms, 8 Ohms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-89-6
Minimum Operating Temperature
- 55 C
Power Dissipation
250 mW
Factory Pack Quantity
3000
Tradename
TrenchFET

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1029X-T1
Manufacturer:
TI
Quantity:
75
Part Number:
SI1029X-T1-E3
Manufacturer:
ALTERA
0
Part Number:
SI1029X-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI1029X-T1-GE3
Quantity:
70 000
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
Ordering Information: Si1029X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
PRODUCT SUMMARY
S
G
D
N-Channel
P-Channel
1
1
2
1
2
3
Complementary N- and P-Channel 60 V (D-S) MOSFET
Top View
SC-89
V
DS
- 60
60
b
(V)
6
5
4
J
a
1.40 at V
= 150 °C)
D
G
S
8 at V
4 at V
3 at V
1
2
2
R
DS(on)
GS
GS
GS
GS
= - 4.5 V
a
= - 10 V
= 4.5 V
()
= 10 V
T
T
T
T
A
A
A
A
Marking Code: H
a
= 25 °C
= 85 °C
= 25 °C
= 85 °C
A
I
= 25 °C, unless otherwise noted)
D
- 500
500
200
- 25
(mA)
Symbol
T
ESD
J
V
V
I
P
, T
I
DM
I
DS
GS
D
S
D
stg
FEATURES
BENEFITS
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Very Small Footprint
• High-Side Switching
• Low On-Resistance:
• Low Threshold: ± 2 V (typ.)
• Fast Switching Speed: 15 ns (typ.)
• Gate-Source ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
• Ease in Driving Switches
• Low Offset (Error) Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Replace Digital Transistor, Level-Shifter
• Battery Operated Systems
• Power Supply Converter Circuits
320
230
450
280
145
5 s
Definition
N-Channel, 1.40 
P-Channel, 4 
N-Channel
650
60
Steady State
®
305
220
380
250
130
Power MOSFETs
- 55 to 150
2000
± 20
- 200
- 450
- 145
280
145
5 s
P-Channel
- 650
Vishay Siliconix
- 60
Steady State
- 190
- 135
- 380
250
130
Si1029X
www.vishay.com
Unit
mW
mA
°C
V
V
1

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SI1029X-T1 Summary of contents

Page 1

... Top View Ordering Information: Si1029X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 ° Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si1029X Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Symbol Static V Drain-Source Breakdown Voltage V Gate Threshold Voltage GS(th) I Gate-Body Leakage GSS I Zero Gate Voltage Drain Current DSS a I On-State Drain Current D(on) Drain-Source On-State R DS(on) a Resistance a g Forward Transconductance a V Diode Forward Voltage ...

Page 3

... Gate Charge Document Number: 71435 S10-2432-Rev. C, 25-Oct- °C, unless otherwise noted) A 1200 600 800 1000 0.4 0.5 0.6 Si1029X Vishay Siliconix °C J 900 125 °C 600 300 Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... Si1029X Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (T 1000 100 T = 125 ° 0.00 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage www.vishay.com °C, unless otherwise noted ° °C J 0.9 1.2 1.5 0.4 0 250 µA D 0.0 - 0.2 - 0.4 - 0 Junction Temperature (°C) ...

Page 5

... S10-2432-Rev. C, 25-Oct- °C, unless otherwise noted) A 1200 600 800 1000 1.2 1.5 1.8 Si1029X Vishay Siliconix °C J 900 125 °C 600 300 Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 6

... Si1029X Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (T 1000 100 T = 125 ° 0.00 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage www.vishay.com °C, unless otherwise noted ° °C J 0.9 1.2 1.5 0.5 0 250 µA D 0.3 0.2 0.1 0.0 - 0.1 - 0 Junction Temperature (°C) ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71435. Document Number: 71435 S10-2432-Rev. C, 25-Oct- °C, unless otherwise noted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Si1029X Vishay Siliconix Notes Duty Cycle ...

Page 8

A Î Î Î Î Î Î Î Î 6 Î Î Î Î Î Î Î Î aaa C 1 Î Î Î Î Î Î Î Î ...

Page 9

RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead (0.300) Return to Index Return to Index Document Number: 72605 Revision: 21-Jan-08 0.051 (1.300) 0.012 0.020 (0.500) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) Application Note 826 Vishay Siliconix www.vishay.com 21 ...

Page 10

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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