SI1029X-T1 Vishay/Siliconix, SI1029X-T1 Datasheet - Page 6

• Manufacturer Part Number: SI1029X-T1
• Description: MOSFET 60V 0.5A
• Manufacturer: Vishay/Siliconix

Specifications of SI1029X-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.305 A, - 190 A
• Resistance Drain-source Rds (on): 3 Ohms, 8 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-89-6
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 250 mW
• Factory Pack Quantity: 3000
• Tradename: TrenchFET

Si1029X
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (T
www.vishay.com
6
1000
100
10
1
0.00
V
GS
Source-Drain Diode Forward Voltage
T
J
= 0 V
0.3
= 125 °C
V
SD
- Source-to-Drain Voltage (V)
0.6
T
0.9
J
T
- 0.1
- 0.2
- 0.3
= - 55 °C
J
0.5
0.4
0.3
0.2
0.1
0.0
= 25 °C
Threshold Voltage Variance Over Temperature
- 50
1.2
- 25
T
1.5
0
J
I
D
- Junction Temperature (°C)
= 250 µA
A
25
= 25 °C, unless otherwise noted)
50
75
100
10
8
6
4
2
0
0
125
On-Resistance vs. Gate-to-Source Voltage
150
2
V
GS
I
D
- Gate-to-Source Voltage (V)
= 200 mA
4
S10-2432-Rev. C, 25-Oct-10
Document Number: 71435
6
I
D
= 500 mA
8
10