SI1029X-T1 Vishay/Siliconix, SI1029X-T1 Datasheet - Page 7

• Manufacturer Part Number: SI1029X-T1
• Description: MOSFET 60V 0.5A
• Manufacturer: Vishay/Siliconix

Specifications of SI1029X-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: +/- 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.305 A, - 190 A
• Resistance Drain-source Rds (on): 3 Ohms, 8 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-89-6
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 250 mW
• Factory Pack Quantity: 3000
• Tradename: TrenchFET

N- OR P-CHANNEL TYPICAL CHARACTERISTICS (T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71435.
Document Number: 71435
S10-2432-Rev. C, 25-Oct-10
0.01
0.1
2
1
10
-4
0.2
0.1
Duty Cycle = 0.5
0.05
0.02
10
Single Pulse
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-2
Square Wave Pulse Duration (s)
10
-1
A
= 25 °C, unless otherwise noted)
1
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
JM
- T
t
A
1
= P
t
2
DM
Vishay Siliconix
Z
thJA
thJA
100
t
t
1
2
(t)
= 500 °C/W
Si1029X
www.vishay.com
6
0
0
7