FQP8N60C_Q Fairchild Semiconductor
FQP8N60C_Q
Manufacturer Part Number
FQP8N60C_Q
Description
MOSFET 600V N-Ch Q-FET advance C-Series
Manufacturer
Fairchild Semiconductor
Specifications of FQP8N60C_Q
Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
7.5 A
Resistance Drain-source Rds (on)
1.2 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Fall Time
64.5 ns
Forward Transconductance Gfs (max / Min)
8.7 S
Minimum Operating Temperature
- 55 C
Power Dissipation
147 W
Rise Time
60.5 ns
Typical Turn-off Delay Time
81 ns
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