IRF740B_Q Fairchild Semiconductor, IRF740B_Q Datasheet - Page 9

• Manufacturer Part Number: IRF740B_Q
• Description: MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of IRF740B_Q

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Resistance Drain-source Rds (on): 0.54 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 85 ns
• Forward Transconductance Gfs (max / Min): 3.5 S
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 134 W
• Rise Time: 80 ns
• Typical Turn-off Delay Time: 125 ns

©2001 Fairchild Semiconductor Corporation
Package Dimensions
[2.54
2.54TYP
MAX1.47
0.80
0.35
0.20
0.10
0.10
]
(Continued)
10.16
9.40
#1
(7.00)
0.20
0.20
[2.54
2.54TYP
TO-220F
ø3.18
0.20
]
0.10
(1.00x45 )
0.50
+0.10
–0.05
Dimensions in Millimeters
2.54
2.76
(0.70)
0.20
Rev. A, November 2001
0.20