FDP14AN06LA0_Q Fairchild Semiconductor
![no-image](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_sml.jpg)
FDP14AN06LA0_Q
Manufacturer Part Number
FDP14AN06LA0_Q
Description
MOSFET Single N-Ch 60V Power Trench
Manufacturer
Fairchild Semiconductor
Specifications of FDP14AN06LA0_Q
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
60 A
Resistance Drain-source Rds (on)
0.0128 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Fall Time
50 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
125 W
Rise Time
169 ns
Typical Turn-off Delay Time
24 ns