SI4834BDY-T1 Vishay/Siliconix, SI4834BDY-T1 Datasheet - Page 6
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SI4834BDY-T1
Manufacturer Part Number
SI4834BDY-T1
Description
MOSFET 30V 7.5A 1.1W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI4834BDY-T1.pdf
(10 pages)
Specifications of SI4834BDY-T1
Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.7 A
Resistance Drain-source Rds (on)
22 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
10 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.1 W
Rise Time
10 ns
Factory Pack Quantity
2500
Tradename
TrenchFET
Typical Turn-off Delay Time
19 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4834BDY-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4834BDY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
135
Part Number:
SI4834BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4834BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4834BDY
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72064.
www.vishay.com
6
0.0001
0.001
0.01
0.1
20
10
1
0
Reverse Current vs. Junction Temperature
25
30 V
50
T
J
- Temperature (°C)
75
24 V
100
200
160
120
80
40
0
0
125
6
150
V
DS
C
oss
- Drain-to-Source Voltage (V)
Capacitance
12
18
10
1
0.0
24
0.3
T
J
30
= 150 °C
V
F
Forward Voltage Drop
- Forward Voltage Drop (V)
0.6
S09-0869-Rev. D, 18-May-09
T
J
Document Number: 72064
= 25 °C
0.9
1.2
1.5