SI4834BDY-T1 Vishay/Siliconix, SI4834BDY-T1 Datasheet - Page 6

• Manufacturer Part Number: SI4834BDY-T1
• Description: MOSFET 30V 7.5A 1.1W
• Manufacturer: Vishay/Siliconix

Specifications of SI4834BDY-T1

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.7 A
• Resistance Drain-source Rds (on): 22 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 10 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 10 ns
• Factory Pack Quantity: 2500
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 19 ns

Si4834BDY
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72064.
www.vishay.com
6
0.0001
0.001
0.01
0.1
20
10
1
0
Reverse Current vs. Junction Temperature
25
30 V
50
T
J
- Temperature (°C)
75
24 V
100
200
160
120
80
40
0
0
125
6
150
V
DS
C
oss
- Drain-to-Source Voltage (V)
Capacitance
12
18
10
1
0.0
24
0.3
T
J
30
= 150 °C
V
F
Forward Voltage Drop
- Forward Voltage Drop (V)
0.6
S09-0869-Rev. D, 18-May-09
T
J
Document Number: 72064
= 25 °C
0.9
1.2
1.5