SI4834BDY-T1 Vishay/Siliconix, SI4834BDY-T1 Datasheet - Page 3

• Manufacturer Part Number: SI4834BDY-T1
• Description: MOSFET 30V 7.5A 1.1W
• Manufacturer: Vishay/Siliconix

Specifications of SI4834BDY-T1

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.7 A
• Resistance Drain-source Rds (on): 22 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 10 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 10 ns
• Factory Pack Quantity: 2500
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 19 ns

MOSFET TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
Document Number: 72064
S09-0869-Rev. D, 18-May-09
0.040
0.030
0.020
0.010
0.000
10
30
25
20
15
10
8
6
4
2
0
5
0
0
0
0
V
I
D
V
DS
GS
On-Resistance vs. Drain Current
= 7.5 A
5
3
2
= 15 V
V
= 10 V thru 5 V
DS
Output Characteristics
V
- Drain-to-Source Voltage (V)
Q
GS
10
I
g
D
- Total Gate Charge (nC)
= 4.5 V
Gate Charge
- Drain Current (A)
6
4
15
4 V
9
6
20
V
GS
3 V
= 10 V
12
8
25
15
10
30
1200
960
720
480
240
1.8
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
0
- 50
5
0
0
0
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 7.5 A
C
5
rss
= 10 V
V
1
T
DS
V
0
J
GS
Transfer Characteristics
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
T
- Gate-to-Source Voltage (V)
10
C
25
= 125 °C
25 °C
Capacitance
2
50
15
C
Vishay Siliconix
iss
C
oss
Si4834BDY
75
3
20
100
- 55 °C
www.vishay.com
4
25
125
150
30
5
3