SI4834BDY-T1 Vishay/Siliconix, SI4834BDY-T1 Datasheet - Page 2
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SI4834BDY-T1
Manufacturer Part Number
SI4834BDY-T1
Description
MOSFET 30V 7.5A 1.1W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI4834BDY-T1.pdf
(10 pages)
Specifications of SI4834BDY-T1
Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.7 A
Resistance Drain-source Rds (on)
22 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
10 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.1 W
Rise Time
10 ns
Factory Pack Quantity
2500
Tradename
TrenchFET
Typical Turn-off Delay Time
19 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4834BDY-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4834BDY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
135
Part Number:
SI4834BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4834BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4834BDY
Vishay Siliconix
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
MOSFET SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
SCHOTTKY SPECIFICATIONS T
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
a
b
b
b
b
Symbol
V
I
C
Symbol
rm
R
V
J
F
T
I
t
t
I
I
DS(on)
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
R
= 25 °C, unless otherwise noted
t
t
t
SD
rr
fs
gs
gd
r
f
g
g
J
= 25 °C, unless otherwise noted
V
DS
I
V
F
= 30 V, V
V
DS
I
V
= 1.7 A, dI/dt = 100 A/µs
V
D
I
F
R
DS
I
R
≅ 1 A, V
S
= 15 V, V
= 1.0 A, T
= - 30 V, T
Test Conditions
V
V
= 30 V, T
= 1 A, V
V
V
= 30 V, V
V
V
V
DS
DS
GS
DD
DS
GS
DS
V
V
I
Test Conditions
F
= 0 V, V
GS
R
R
= V
= 4.5 V, I
= 5 V, V
= 15 V, R
= 10 V, I
= 15 V, I
= 1.0 A
= 30 V
= 10 V
GEN
= 0 V, T
GS
GS
GS
J
J
J
GS
= 125 °C
= 100 °C
, I
= 10 V, R
= 125 °C
= 4.5 V, I
= 0 V
GS
D
= 0 V
GS
D
D
D
= 250 µA
L
J
= ± 20 V
= 7.5 A
= 7.5 A
= 6.5 A
= 10 V
= 15 Ω
= 85 °C
D
g
= 7.5 A
= 6 Ω
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
Min.
0.8
0.5
20
0.004
Typ.
0.47
0.36
S09-0869-Rev. D, 18-May-09
0.7
3.0
50
Typ.
0.017
0.024
0.47
0.75
2.9
2.5
1.5
19
10
19
32
35
Document Number: 72064
7
9
9
a
0.100
Max.
0.50
0.42
± 100
0.022
0.030
Max.
2000
10
20
100
3.0
0.5
1.2
2.6
15
11
15
17
30
15
55
55
1
Unit
Unit
mA
pF
nA
µA
nC
ns
V
Ω
Ω
V
A
S
V