SI4834BDY-T1 Vishay/Siliconix, SI4834BDY-T1 Datasheet - Page 5

• Manufacturer Part Number: SI4834BDY-T1
• Description: MOSFET 30V 7.5A 1.1W
• Manufacturer: Vishay/Siliconix

Specifications of SI4834BDY-T1

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.7 A
• Resistance Drain-source Rds (on): 22 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 10 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 10 ns
• Factory Pack Quantity: 2500
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 19 ns

MOSFET TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
Document Number: 72064
S09-0869-Rev. D, 18-May-09
0.01
0.01
0.1
0.1
2
1
2
1
10 -
10 -
4
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Single Pulse
10 -
3
10 -
3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10 -
2
Square Wave Pulse Duration (s)
10 -
Square Wave Pulse Duration (s)
2
10 -
1
10 -
1
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
-
T
1
t
A
1
= P
Vishay Siliconix
t
2
DM
Si4834BDY
Z
thJA
thJA
100
t
t
1
2
(t)
= 93 °C/W
www.vishay.com
600
10
5