SI4834BDY-T1 Vishay/Siliconix, SI4834BDY-T1 Datasheet - Page 5
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SI4834BDY-T1
Manufacturer Part Number
SI4834BDY-T1
Description
MOSFET 30V 7.5A 1.1W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI4834BDY-T1.pdf
(10 pages)
Specifications of SI4834BDY-T1
Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.7 A
Resistance Drain-source Rds (on)
22 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
10 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.1 W
Rise Time
10 ns
Factory Pack Quantity
2500
Tradename
TrenchFET
Typical Turn-off Delay Time
19 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4834BDY-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4834BDY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
135
Part Number:
SI4834BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4834BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
MOSFET TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
Document Number: 72064
S09-0869-Rev. D, 18-May-09
0.01
0.01
0.1
0.1
2
1
2
1
10 -
10 -
4
4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Single Pulse
10 -
3
10 -
3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10 -
2
Square Wave Pulse Duration (s)
10 -
Square Wave Pulse Duration (s)
2
10 -
1
10 -
1
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
-
T
1
t
A
1
= P
Vishay Siliconix
t
2
DM
Si4834BDY
Z
thJA
thJA
100
t
t
1
2
(t)
= 93 °C/W
www.vishay.com
600
10
5