SI4834BDY-T1 Vishay/Siliconix, SI4834BDY-T1 Datasheet - Page 4
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SI4834BDY-T1
Manufacturer Part Number
SI4834BDY-T1
Description
MOSFET 30V 7.5A 1.1W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI4834BDY-T1.pdf
(10 pages)
Specifications of SI4834BDY-T1
Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.7 A
Resistance Drain-source Rds (on)
22 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
10 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.1 W
Rise Time
10 ns
Factory Pack Quantity
2500
Tradename
TrenchFET
Typical Turn-off Delay Time
19 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4834BDY-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4834BDY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
135
Part Number:
SI4834BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4834BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4834BDY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.1
0.4
0.2
0.0
20
10
1
0.0
- 50
Source-Drain Diode Forward Voltage
- 25
0.2
T
V
J
SD
= 150 °C
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
- Temperature (°C)
25
0.6
50
I
D
= 250 µA
75
0.8
0.01
100
0.1
T
10
J
100
1
0.1
= 25 °C
Limited by R
1.0
* V
Safe Operating Area, Junction-to-Foot
125
DS
> minimum V
V
150
1.2
DS
DS(on)
Single Pulse
T
- Drain-to-Source Voltage (V)
C
1
= 25 °C
*
GS
at which R
DS(on)
10
0.06
0.05
0.04
0.03
0.02
0.01
0.00
100
80
60
40
20
0
is specified
10 -
0
3
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
2
100
10 -
V
GS
2
- Gate-to-Source Voltage (V)
4
I
D
Time (s)
S09-0869-Rev. D, 18-May-09
= 7.5 A
10 -
Document Number: 72064
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