SI3457DV_Q Fairchild Semiconductor, SI3457DV_Q Datasheet - Page 3

• Manufacturer Part Number: SI3457DV_Q
• Description: MOSFET SSOT6 SINGLE PCH
• Manufacturer: Fairchild Semiconductor

Specifications of SI3457DV_Q

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: - 4 A
• Resistance Drain-source Rds (on): 44 mOhms
• Configuration: Single Quad Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SSOT-6
• Fall Time: 12 ns
• Forward Transconductance Gfs (max / Min): 8.4 S
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.6 W
• Rise Time: 12 ns
• Typical Turn-off Delay Time: 16 ns

Typical Characteristics
15
12
20
15
10
9
6
3
0
5
0
1
0
1.6
1.4
1.2
0.8
0.6
Figure 1. On-Region Characteristics.
1
V
-50
Figure 5. Transfer Characteristics.
GS
Figure 3. On-Resistance Variation
V
-6.0V
DS
= -10V
V
I
D
= -5V
GS
= -4.0A
-25
= -10V
1
-V
-V
DS
2
withTemperature.
GS
, DRAIN TO SOURCE VOLTAGE (V)
-5.0V
T
, GATE TO SOURCE VOLTAGE (V)
0
J
, JUNCTION TEMPERATURE (
-4.5V
2
25
3
50
T
-4.0V
A
= -55
3
75
o
C
-3.5V
125
100
o
4
C)
o
4
-3.0V
125
25
o
C
150
5
5
Figure 6. Body Diode Forward Voltage Variation
0.22
0.18
0.14
0.06
0.02
0.0001
0.1
0.001
0.01
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
0.1
1.8
1.6
1.4
1.2
0.8
10
2
1
2
1
T
0
0
Drain Current and Gate Voltage.
A
V
= 25
GS
= 0V
V
o
C
Gate-to-Source Voltage.
GS
0.2
-V
= -4.5V
-V
SD
4
, BODY DIODE FORWARD VOLTAGE (V)
4
GS
T
, GATE TO SOURCE VOLTAGE (V)
A
T
= 125
A
-5.0V
-I
0.4
= 125
D
, DRAIN CURRENT (A)
o
C
8
o
C
-6.0V
6
0.6
25
o
C
-7.0V
12
-55
0.8
o
C
-8.0V
8
16
I
Si3457DV Rev A1 (W)
D
1
= -2.0A
-10V
20
1.2
10