NDH8304P_Q Fairchild Semiconductor
NDH8304P_Q
Manufacturer Part Number
NDH8304P_Q
Description
MOSFET Dual P-Ch FET Enhancement Mode
Manufacturer
Fairchild Semiconductor
Specifications of NDH8304P_Q
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
- 2.7 A
Resistance Drain-source Rds (on)
0.061 Ohms
Configuration
Dual Dual Drain
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SSOT-8
Fall Time
25 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
0.8 W
Rise Time
25 ns
Typical Turn-off Delay Time
78 ns
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