FDC6392S_Q Fairchild Semiconductor, FDC6392S_Q Datasheet - Page 3

• Manufacturer Part Number: FDC6392S_Q
• Description: MOSFET 20V P-Ch PowerTrench Integrated
• Manufacturer: Fairchild Semiconductor

Specifications of FDC6392S_Q

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: - 2.2 A
• Resistance Drain-source Rds (on): 0.15 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SSOT-6
• Fall Time: 11 ns
• Forward Transconductance Gfs (max / Min): 6 S
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.96 W
• Rise Time: 11 ns
• Typical Turn-off Delay Time: 13 ns

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Electrical Characteristics
the drain pins. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJC
is guaranteed by design while R
a) 130 °C/W when
mounted on a 0.125
in
copper.
2
pad of 2 oz.
θCA
is determined by the user's board design.
T
A
b) 140°C/W when mounted
= 25°C unless otherwise noted
on a .004 in
copper
2
pad of 2 oz
c) 180°C/W when mounted on a
minimum pad.
FDC6392S Rev C(W)