NDS9435A_Q Fairchild Semiconductor, NDS9435A_Q Datasheet - Page 3
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NDS9435A_Q
Manufacturer Part Number
NDS9435A_Q
Description
MOSFET -30V -5.3A P-CH
Manufacturer
Fairchild Semiconductor
Datasheet
1.NDS9435A_Q.pdf
(5 pages)
Specifications of NDS9435A_Q
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
- 5.3 A
Resistance Drain-source Rds (on)
42 mOhms
Configuration
Single Quad Drain Triple Source
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
9 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
2.5 W
Rise Time
13 ns
Typical Turn-off Delay Time
14 ns
Typical Characteristics
15
12
30
20
10
9
6
3
0
0
Figure 3. On-Resistance Variation with
1.6
1.4
1.2
0.8
0.6
1
0
Figure 1. On-Region Characteristics.
1
-50
Figure 5. Transfer Characteristics.
V
GS
V
V
I
D
DS
GS
= -10V
1.5
= -5.3A
-25
= -5V
= -10V
1
-V
-V
DS
GS
0
T
, DRAIN TO SOURCE VOLTAGE (V)
2
, GATE TO SOURCE VOLTAGE (V)
J
-6.0V
, JUNCTION TEMPERATURE (
Temperature.
2
25
2.5
-5.0V
50
3
3
75
-4.5V
T
A
4
100
= -55
3.5
-4.0V
o
o
C
C)
125
-3.5V
-3.0V
125
5
4
o
150
C
25
o
C
175
4.5
6
Figure 6. Body Diode Forward Voltage Variation
0.25
0.15
0.05
0.0001
0.2
0.1
0.001
0
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.01
with Source Current and Temperature.
1.8
1.6
1.4
1.2
0.8
100
0.1
10
2
2
1
1
0
0
Drain Current and Gate Voltage.
T
A
= 25
V
V
GS
GS
Gate-to-Source Voltage.
o
0.2
C
=-4.0V
=0V
-V
-V
SD
6
-4.5V
4
GS
, BODY DIODE FORWARD VOLTAGE (V)
T
, GATE TO SOURCE VOLTAGE (V)
A
0.4
= 125
T
-5.0V
A
-I
D
= 125
, DRAIN CURRENT (A)
o
C
-6.0V
12
o
0.6
C
25
6
-7.0V
o
C
0.8
18
-55
o
-8.0V
C
1
8
24
NDS9435A Rev E(W)
I
D
-10V
1.2
= -2.8A
1.4
30
10