NDS9435A_Q Fairchild Semiconductor, NDS9435A_Q Datasheet
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NDS9435A_Q
Specifications of NDS9435A_Q
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NDS9435A_Q Summary of contents
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... Thermal Resistance, Junction-to-Case R θJC Package Marking and Ordering Information Device Marking Device NDS9435A NDS9435A 2002 Fairchild Semiconductor Corporation MOSFET Features • –5.3 A, –30 V PowerTrench • Low gate charge • Fast switching speed • High performance trench technology for extremely ...
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Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate–Body Leakage, Forward GSSF I Gate–Body Leakage, Reverse GSSR On Characteristics (Note 2) ...
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Typical Characteristics -10V -6.0V GS -5.0V -4. DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -5. -10V GS 1.4 1.2 ...
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Typical Characteristics -5. GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON) 10 10ms 100ms 1s 1 10s DC ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...