BUK765R2-40B /T3 NXP Semiconductors, BUK765R2-40B /T3 Datasheet - Page 9

• Manufacturer Part Number: BUK765R2-40B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK765R2-40B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 143 A
• Resistance Drain-source Rds (on): 0.0052 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 56 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 203 W
• Rise Time: 51 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 81 ns
• Part # Aliases: BUK765R2-40B,118

NXP Semiconductors
BUK765R2-40B
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
V
20
DD
= 14 V
(A)
I
40
S
100
75
50
25
V
0
DD
0.0
Q
G
All information provided in this document is subject to legal disclaimers.
= 32 V
(nC)
03nk15
Rev. 3 — 22 November 2011
60
0.3
T
j
= 175 °C
0.6
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
4000
3000
2000
1000
0
0.9
10
as a function of drain-source voltage; typical
values
T
j
−1
= 25 °C
V
N-channel TrenchMOS standard level FET
SD
03nk14
(V)
1.2
1
BUK765R2-40B
C
C
C
iss
oss
rss
10
V
© NXP B.V. 2011. All rights reserved.
DS
(V)
03nk21
10
2
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