BUK765R2-40B /T3 NXP Semiconductors, BUK765R2-40B /T3 Datasheet - Page 4

• Manufacturer Part Number: BUK765R2-40B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK765R2-40B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 143 A
• Resistance Drain-source Rds (on): 0.0052 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 56 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 203 W
• Rise Time: 51 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 81 ns
• Part # Aliases: BUK765R2-40B,118

NXP Semiconductors
BUK765R2-40B
Product data sheet
Fig 3.
(A)
I
D
10
10
10
10
-1
3
2
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
Limit R
DSon
Capped at 75A due to package
= V
DS
1
/ I
D
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 November 2011
10
DC
N-channel TrenchMOS standard level FET
100 ms
1 ms
10 ms
t
100 μ s
p
=10 μ s
10
BUK765R2-40B
2
V
DS
(V)
© NXP B.V. 2011. All rights reserved.
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