BUK765R2-40B /T3 NXP Semiconductors, BUK765R2-40B /T3 Datasheet - Page 7

• Manufacturer Part Number: BUK765R2-40B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK765R2-40B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 143 A
• Resistance Drain-source Rds (on): 0.0052 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 56 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 203 W
• Rise Time: 51 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 81 ns
• Part # Aliases: BUK765R2-40B,118

NXP Semiconductors
BUK765R2-40B
Product data sheet
Fig 5.
Fig 7.
(A)
I
D
(A)
I
10
10
10
10
10
10
400
300
200
100
D
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
14
12
20
2
10
2
9.5
9
4
min
8.5
8
7.5
7
6.5
6
5.5
5
4.5
typ
6
label is V
4
max
V
All information provided in this document is subject to legal disclaimers.
GS
8
GS
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Rev. 3 — 22 November 2011
10
6
Fig 6.
Fig 8.
R
(
m Ω
DSon
g
(S)
fs
18
13
80
60
40
20
)
8
3
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
20
10
BUK765R2-40B
40
15
60
V
© NXP B.V. 2011. All rights reserved.
GS
I
D
(V)
(A)
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20
80
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