BUK765R2-40B /T3 NXP Semiconductors, BUK765R2-40B /T3 Datasheet - Page 6

• Manufacturer Part Number: BUK765R2-40B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK765R2-40B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 143 A
• Resistance Drain-source Rds (on): 0.0052 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 56 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 203 W
• Rise Time: 51 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 81 ns
• Part # Aliases: BUK765R2-40B,118

NXP Semiconductors
6. Characteristics
Table 6.
BUK765R2-40B
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
source-drain voltage
reverse recovery time
recovered charge
All information provided in this document is subject to legal disclaimers.
I
see
see
see
V
V
I
V
T
V
R
from drain lead 6 mm from package
from source lead to source bond
I
see
Conditions
I
I
I
V
V
V
see
V
see
T
to centre of die ; T
from upper edge of drain mounting
base to centre of die ; T
pad ; T
I
V
D
D
D
D
D
D
S
S
Rev. 3 — 22 November 2011
j
j
DS
DS
GS
GS
GS
GS
GS
DS
GS
G(ext)
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
= 25 °C; see
= 25 °C; see
= 25 A; V
= 20 A; dI
Figure 10
Figure 10
Figure 10
Figure
Figure
Figure 15
= 40 V; V
= 40 V; V
= 30 V; R
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 0 V; V
= -10 V; V
= 10 Ω; T
j
= 25 °C
11; see
11; see
GS
DS
S
DS
DS
DS
DS
D
D
/dt = -100 A/µs;
GS
GS
DS
L
DS
DS
= 25 A; T
= 25 A; T
= 32 V; V
= 0 V; T
= V
= V
= V
= 1.2 Ω; V
GS
GS
Figure 13
= 25 V; f = 1 MHz;
Figure 14
j
= 0 V; T
= 0 V; T
= 0 V; T
= 25 °C
= 0 V; T
= 20 V; T
j
= 0 V; T
= 0 V; T
GS
GS
GS
Figure 12
Figure 12
= 25 °C
; T
; T
; T
j
j
= 25 °C;
j
j
j
j
j
GS
j
j
j
= 25 °C
= 25 °C;
= -55 °C;
= 175 °C;
= 175 °C;
= 25 °C;
j
GS
= 25 °C
= 175 °C
= 25 °C
N-channel TrenchMOS standard level FET
j
j
= 25 °C
j
= 10 V;
= 25 °C
= -55 °C
= 25 °C
= 10 V;
BUK765R2-40B
Min
40
36
2
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
3
-
-
0.02
-
2
2
-
4.4
52
12
16
2842
711
296
15
51
81
56
4.5
2.5
7.5
0.85
54
38
© NXP B.V. 2011. All rights reserved.
853
406
-
Max
-
-
4
4.4
-
1
500
100
100
9.9
5.2
-
-
-
3789
-
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
V
ns
nC
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