BUK765R2-40B /T3 NXP Semiconductors, BUK765R2-40B /T3 Datasheet - Page 2

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BUK765R2-40B /T3

Manufacturer Part Number
BUK765R2-40B /T3
Description
MOSFET HIGH PERF TRENCHMOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK765R2-40B /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
143 A
Resistance Drain-source Rds (on)
0.0052 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
56 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
203 W
Rise Time
51 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
81 ns
Part # Aliases
BUK765R2-40B,118
NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
BUK765R2-40B
Product data sheet
Pin
1
2
3
mb
Type number
BUK765R2-40B
It is not possible to make a connection to pin 2.
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to drain
Package
Name
D2PAK
[1]
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 November 2011
Simplified outline
SOT404 (D2PAK)
1
mb
2
N-channel TrenchMOS standard level FET
3
BUK765R2-40B
Graphic symbol
mbb076
G
© NXP B.V. 2011. All rights reserved.
D
Version
SOT404
S
2 of 14

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