PHC21025 /T3 NXP Semiconductors, PHC21025 /T3 Datasheet - Page 9

• Manufacturer Part Number: PHC21025 /T3
• Description: MOSFET TAPE-7 MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PHC21025 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A, - 2.3 A
• Resistance Drain-source Rds (on): 0.1 Ohms
• Configuration: Dual Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 26 ns
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 2 W
• Rise Time: 36 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 55 ns
• Part # Aliases: PHC21025,118

NXP Semiconductors
PHC21025
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
V
(V)
(A)
I
GS
D
16
12
10
8
4
0
8
6
4
2
0
function of gate-source voltage; N-channel;
typical values
charge; N-channel; typical values
Transfer characteristics: drain current as a
0
0
2
2
4
4
6
6
All information provided in this document is subject to legal disclaimers.
Q
V
G
GS
mbe141
mbe136
(nC)
(V)
Rev. 04 — 17 March 2011
8
8
Fig 10. Transfer characteristics: drain current as a
Fig 12. Gate-source voltage as a function of gate
V
(V)
(A)
I
GS
−10
−10
D
−8
−6
−4
−2
−8
−6
−4
−2
0
0
function of gate-source voltage; P-channel;
typical values
charge; P-channel; typical values
0
0
Complementary intermediate level FET
−2
−2
−4
−4
−6
PHC21025
−6
© NXP B.V. 2011. All rights reserved.
−8
V
Q
GS
g
mbe157
mbe145
(nC)
(V)
−10
−8
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