PHC21025 /T3 NXP Semiconductors, PHC21025 /T3 Datasheet - Page 2

• Manufacturer Part Number: PHC21025 /T3
• Description: MOSFET TAPE-7 MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PHC21025 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A, - 2.3 A
• Resistance Drain-source Rds (on): 0.1 Ohms
• Configuration: Dual Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 26 ns
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 2 W
• Rise Time: 36 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 55 ns
• Part # Aliases: PHC21025,118

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PHC21025
Product data sheet
Pin
1
2
3
4
5
6
7
8
Type number
PHC21025
Symbol Description
S1
G1
S2
G2
D2
D2
D1
D1
Pinning information
Ordering information
source1
gate1
source2
gate2
drain2
drain2
drain1
drain1
Table 1.
[1]
Package
Name
SO8
Symbol
Dynamic characteristics
Q
GD
Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with a
thermal resistance from ambient to solder point of 90 K/W.
Quick reference data
Parameter
gate-drain charge
Description
plastic small outline package; 8 leads; body width 3.9 mm
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 17 March 2011
Simplified outline
SOT96-1 (SO8)
…continued
8
1
Conditions
V
V
P-channel; see
V
V
N-channel; see
GS
DS
GS
DS
= -15 V; T
= 15 V; T
= -10 V; I
= 10 V; I
5
4
D
j
D
Complementary intermediate level FET
j
= 25 °C;
= 2.3 A;
= 25 °C;
= -2.3 A;
Figure 12
Figure 11
Graphic symbol
D1 D1 D2 D2
S1 G1 S2 G2
Min
-
-
PHC21025
© NXP B.V. 2011. All rights reserved.
Typ
3
2.5
sym114
Version
SOT96-1
Max Unit
-
-
2 of 16
nC
nC