PHC21025 /T3 NXP Semiconductors, PHC21025 /T3 Datasheet - Page 11

• Manufacturer Part Number: PHC21025 /T3
• Description: MOSFET TAPE-7 MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PHC21025 /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A, - 2.3 A
• Resistance Drain-source Rds (on): 0.1 Ohms
• Configuration: Dual Dual Drain
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 26 ns
• Minimum Operating Temperature: - 65 C
• Power Dissipation: 2 W
• Rise Time: 36 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 55 ns
• Part # Aliases: PHC21025,118

NXP Semiconductors
PHC21025
Product data sheet
Fig 17. Temperature coefficient of gate-source
Fig 19. Temperature coefficient of drain-source on-state resistance; P-channel
k
1.2
1.1
1.0
0.9
0.8
0.7
0.6
threshold voltage
Typical V
Typical R
(1) I
(2) I
−50
D
D
= -1 A; V
= -0.5 A; V
GSth
DSon
0
at I
at:
GS
GS
D
= -10 V.
= 1 mA; V
= -4.5 V.
50
k
DS
1.8
1.6
1.4
1.2
1.0
0.8
0.6
100
−50
= V
All information provided in this document is subject to legal disclaimers.
T
j
GS
mbe138
(°C)
= V
150
Rev. 04 — 17 March 2011
0
GSth
.
50
Fig 18. Temperature coefficient of drain-source
k
1.8
1.6
1.4
1.2
1.0
0.8
0.6
100
−50
on-state resistance; N-channel
Typical R
(1) I
(2) I
T
j
D
D
mbe146
(°C)
Complementary intermediate level FET
= 2.2 A; V
= 1 A; V
(1)
(2)
150
DSon
0
GS
at:
GS
= 4.5 V.
= 10 V.
50
PHC21025
100
© NXP B.V. 2011. All rights reserved.
(1)
(2)
T
j
(°C)
mbe139
150
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