PHC21025 NXP Semiconductors, PHC21025 Datasheet
PHC21025
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PHC21025 Summary of contents
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... PHC21025 Complementary intermediate level FET Rev. 04 — 17 March 2011 1. Product profile 1.1 General description Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only ...
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... P-channel; see N-channel; see Simplified outline 8 1 SOT96-1 (SO8) Description plastic small outline package; 8 leads; body width 3.9 mm All information provided in this document is subject to legal disclaimers. Rev. 04 — 17 March 2011 PHC21025 Complementary intermediate level FET Min Typ = -2 °C; j Figure °C; ...
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... °C; see Figure °C amb ≤ 80 °C; P-channel T sp ≤ 80 °C; N-channel °C; pulsed; P-channel °C; pulsed; N-channel sp All information provided in this document is subject to legal disclaimers. Rev. 04 — 17 March 2011 PHC21025 Complementary intermediate level FET Min Max - -2.3 - 3.5 [ [1] - -10 ...
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... Fig 2. − (A) −10 (1) − δ −1 − −2 −10 −1 −10 −1 −10 All information provided in this document is subject to legal disclaimers. Rev. 04 — 17 March 2011 PHC21025 Complementary intermediate level FET ( δ − −2 − δ = 0.01 °C. s (1) R limitation. DSon SOAR ...
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... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration PHC21025 Product data sheet Conditions −4 − All information provided in this document is subject to legal disclaimers. Rev. 04 — 17 March 2011 PHC21025 Complementary intermediate level FET Min Typ Max - - 35 mbe152 δ ...
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... V; P-channel N-channel 2 °C; N-channel; j see Figure - °C; P-channel see Figure 12 All information provided in this document is subject to legal disclaimers. Rev. 04 — 17 March 2011 PHC21025 Complementary intermediate level FET Min Typ Max = 25 °C; - ° ° -100 = 25 ° 100 = 25 ° 100 = 25 °C; - ...
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... N-channel; see Figure -1. P-channel; see Figure -1. /dt = 100 A/µ - P-channel /dt = -100 A/µ N-channel All information provided in this document is subject to legal disclaimers. Rev. 04 — 17 March 2011 PHC21025 Complementary intermediate level FET Min Typ Max = 2 250 - Figure 5 - 250 - Figure 6 - 140 - Figure 5 - 140 - Figure 6 - ...
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... C rss (V) DS Fig 6. mbe142 (V) DS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 04 — 17 March 2011 PHC21025 Complementary intermediate level FET 600 C (pF) 400 C 200 −10 −20 0 Capacitance as a function of drain-source voltage; P-channel; typical values − − − ...
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... Q (nC) G Fig 12. Gate-source voltage as a function of gate charge; P-channel; typical values All information provided in this document is subject to legal disclaimers. Rev. 04 — 17 March 2011 PHC21025 Complementary intermediate level FET mbe157 −2 −4 −6 V (V) GS mbe145 −2 −4 −6 −8 ...
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... T = -55 °C. j voltage; P-channel; typical values DSon (mΩ) (1) (2)(3) (4) ( −2 −4 −6 0 ≥ ° DSon drain current; typical values PHC21025 mbe158 (2) (3) −1.5 −2 V (V) SD mda165 −8 −10 V (V) GS © NXP B.V. 2011. All rights reserved ...
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... GSth Fig 18. Temperature coefficient of drain-source 1.8 k 1.6 1.4 1.2 1.0 0.8 0.6 − 100 All information provided in this document is subject to legal disclaimers. Rev. 04 — 17 March 2011 PHC21025 Complementary intermediate level FET (1) (2) − 100 Typical R at: DSon ( on-state resistance; N-channel ...
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... A 1 θ detail 6.2 1.0 0.7 1.05 0.25 0.25 5.8 0.4 0.6 0.039 0.028 0.041 0.01 0.01 0.016 0.024 EUROPEAN PROJECTION PHC21025 SOT96 (1) θ 0.7 0 0.028 0.004 0.012 ISSUE DATE 99-12-27 03-02-18 © NXP B.V. 2011. All rights reserved ...
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... Product data sheet Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 04 — 17 March 2011 PHC21025 Complementary intermediate level FET Supersedes PHC21025 v.3 PHC21025 v.2 © NXP B.V. 2011. All rights reserved ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 04 — 17 March 2011 PHC21025 Complementary intermediate level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 17 March 2011 PHC21025 Complementary intermediate level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PHC21025 All rights reserved. Date of release: 17 March 2011 Document identifier: PHC21025 ...