PHC21025 /T3 NXP Semiconductors, PHC21025 /T3 Datasheet - Page 13
PHC21025 /T3
Manufacturer Part Number
PHC21025 /T3
Description
MOSFET TAPE-7 MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PHC21025_T3.pdf
(16 pages)
Specifications of PHC21025 /T3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.5 A, - 2.3 A
Resistance Drain-source Rds (on)
0.1 Ohms
Configuration
Dual Dual Drain
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Fall Time
26 ns
Minimum Operating Temperature
- 65 C
Power Dissipation
2 W
Rise Time
36 ns
Factory Pack Quantity
2500
Typical Turn-off Delay Time
55 ns
Part # Aliases
PHC21025,118
NXP Semiconductors
8. Revision history
Table 7.
PHC21025
Product data sheet
Document ID
PHC21025 v.4
Modifications:
PHC21025 v.3
Revision history
Release date
20110317
20101217
•
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Rev. 04 — 17 March 2011
Change notice
-
-
Complementary intermediate level FET
PHC21025
Supersedes
PHC21025 v.3
PHC21025 v.2
© NXP B.V. 2011. All rights reserved.
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