NDS0610_D87Z Fairchild Semiconductor, NDS0610_D87Z Datasheet - Page 4

• Manufacturer Part Number: NDS0610_D87Z
• Description: MOSFET P-Channel FET Enhancement Mode
• Manufacturer: Fairchild Semiconductor

Specifications of NDS0610_D87Z

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 0.12 A
• Resistance Drain-source Rds (on): 1 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23-3
• Fall Time: 6.3 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.36 W
• Rise Time: 6.3 ns
• Factory Pack Quantity: 10000
• Typical Turn-off Delay Time: 10 ns

Typical Characteristics
0.001
0.01
0.1
10
10
8
6
4
2
0
1
Figure 9. Maximum Safe Operating Area.
0
Figure 7. Gate Charge Characteristics.
1
0.001
I
0.01
D
SINGLE PULSE
R
0.1
R
= -0.5A
0.0001
DS(ON)
V
JA
1
T
GS
A
= 350
= 25
= -10V
LIMIT
0.4
o
o
C
C/W
D = 0.5
-V
0.2
0.1
0.05
DS
0.02
0.01
, DRAIN-SOURCE VOLTAGE (V)
Q
SINGLE PULSE
g
, GATE CHARGE (nC)
0.8
0.001
DC
10
V
10s
DS
Figure 11. Transient Thermal Response Curve.
= -12V
1.2
1s
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.
100ms
10ms
-48V
0.01
1.6
1ms
100us
-24V
100
2
0.1
t
1
, TIME (sec)
100
80
60
40
20
0
5
4
3
2
1
0
0.01
0
Figure 8. Capacitance Characteristics.
C
Figure 10. Single Pulse Maximum
1
RSS
10
C
-V
OSS
0.1
DS
Power Dissipation.
, DRAIN TO SOURCE VOLTAGE (V)
20
10
t
1
C
, TIME (sec)
ISS
30
1
P(pk)
Duty Cycle, D = t
T
R
J
R
- T
JA
JA
40
(t) = r(t) * R
100
A
= 350
t
1
= P * R
SINGLE PULSE
R
t
2
10
JA
T
A
= 350°C/W
f = 1 MHz
V
o
= 25°C
GS
C/W
50
NDS0610 Rev B(W)
JA
= 0 V
1
JA
(t)
/ t
2
1000
100
60