NDS0610_D87Z Fairchild Semiconductor, NDS0610_D87Z Datasheet
NDS0610_D87Z
Manufacturer Part Number
NDS0610_D87Z
Description
MOSFET P-Channel FET Enhancement Mode
Manufacturer
Fairchild Semiconductor
Datasheet
1.NDS0610_D87Z.pdf
(5 pages)
Specifications of NDS0610_D87Z
Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 0.12 A
Resistance Drain-source Rds (on)
1 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23-3
Fall Time
6.3 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
0.36 W
Rise Time
6.3 ns
Factory Pack Quantity
10000
Typical Turn-off Delay Time
10 ns
NDS0610
P-Channel Enhancement Mode Field Effect Transistor
General Description
These
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. This very high
density process has been designed to minimize on-
state
performance and fast switching. They can be used, with
a minimum of effort, in most applications requiring up to
120mA DC and can deliver current up to 1A.
This product is particularly suited to low voltage
applications requiring a low current high side switch.
2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
T
Thermal Characteristics
R
Package Marking and Ordering Information
D
DSS
GSS
D
J
L
, T
JA
Device Marking
STG
resistance,
P-Channel enhancement mode field effect
610
SOT-23
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Derate Above 25 C
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds
Thermal Resistance, Junction-to-Ambient
provide
D
– Continuous
– Pulsed
rugged
NDS0610
G
Device
Parameter
and
S
reliable
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1)
(Note 1)
(Note 1)
Features
Voltage controlled p-channel small signal switch
High density cell design for low R
High saturation current
0.12A, 60V.
Tape width
G
8mm
R
R
Ratings
55 to +150
DS(ON)
DS(ON)
0.36
300
350
0.12
2.9
60
20
D
1
= 10
= 20
S
@ V
@ V
DS(ON)
GS
GS
July 2002
3000 units
= 10 V
= 4.5 V
NDS0610 Rev B(W)
Quantity
Units
mW/ C
C/W
W
V
V
A
C
C
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NDS0610_D87Z Summary of contents
Page 1
... Thermal Characteristics Thermal Resistance, Junction-to-Ambient R JA Package Marking and Ordering Information Device Marking Device 610 NDS0610 2002 Fairchild Semiconductor Corporation Features 0.12A, 60V. Voltage controlled p-channel small signal switch and reliable High density cell design for low R High saturation current S ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage. GSS On Characteristics (Note 2) V Gate Threshold Voltage GS(th) V ...
Page 3
Typical Characteristics 1.4 V =-10V -4.5V GS -4.0V -6.0V 1.2 1 0.8 0.6 0.4 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -0. ...
Page 4
Typical Characteristics -12V I = -0. 0.4 0.8 1 GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics LIMIT DS(ON) 100ms 0.1 1s 10s ...
Page 5
CROSSVOLT â â â â Rev. I ...